STD45P4LLF6AG Datasheet, PDF (5/16 Pages) STMicroelectronics – High avalanche ruggedness

STD45P4LLF6AG
Symbol
Parameter
Table 7: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM⁽¹⁾
VSD⁽²⁾
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
-
-50 A
-
-200 A
VGS = 0 V, ISD = -50 A
-
-1.3 V
ISD = -50 A, di/dt = -100 A/µs,
- 27.5
ns
VDD = -32 V (see Figure 15: "Test
circuit for inductive load
-
24.5
nC
switching and diode recovery
times")
- -1.8
A
Notes:
(1) _{Pulse width is limited by safe operating area.}
(2) _{Pulse test: pulse duration = 300 µs, duty cycle 1.5%.}
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