STD45P4LLF6AG Datasheet, PDF (4/16 Pages) STMicroelectronics – High avalanche ruggedness

Electrical characteristics
STD45P4LLF6AG
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = -250 µA
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage drain
current
Gate-body leakage current
Gate threshold voltage
Static drain-source on-
resistance
VGS = 0 V, VDS = -40 V
VGS = 0 V, VDS = -40 V,
Tcase = 125 °C
VDS = 0 V, VGS = -18 V
VDS = VGS, ID = -250 µA
VGS = -10 V, ID = -25 A
VGS = -4.5 V, ID = -25 A
Min. Typ. Max. Unit
-40
V
-1
µA
-10
-100 nA
-1
-2.5 V
12 15
mΩ
17 20
Symbol
Parameter
Ciss Input capacitance
Coss Output capacitance
Crss
Reverse transfer
capacitance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Table 5: Dynamic
Test conditions
VDS = -25 V, f = 1 MHz,
VGS = 0 V
VDD = -20 V, ID = -50 A,
VGS = -10 V (see Figure 14:
"Gate charge test circuit")
Min. Typ. Max. Unit
- 3525 -
- 345
-
pF
- 240 -
- 65.5 -
- 11.5 - nC
-
13
-
Symbol
Parameter
td(on) Turn-on delay time
tr
Rise time
td(off) Turn-off delay time
tf
Fall time
Table 6: Switching times
Test conditions
VDD = -20 V, ID = -25 A
RG = 4.7 Ω, VGS = -10 V (see
Figure 13: "Switching times test
circuit for resistive load" )
Min. Typ. Max. Unit
-
12
-
- 35.5 -
ns
- 63.5 -
-
31
-
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DocID027807 Rev 2