STD40NF10 Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 100V - 0.025Ω - 50A TO-220 / DPAK Low gate charge STripFET™ II Power MOSFET

STP40NF10 - STD40NF10
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 50A, V_GS = 0
I_SD = 50A, V_DD = 25V
di/dt = 100A/µs,
T_j = 150°C
(see Figure 18)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max Unit
80 A
320 A
1.5 V
80
ns
250
nC
6.4
A
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