STD40NF10 Datasheet, PDF (3/15 Pages) STMicroelectronics – N-channel 100V - 0.025Ω - 50A TO-220 / DPAK Low gate charge STripFET™ II Power MOSFET

STP40NF10 - STD40NF10
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS Drain-source voltage (v_gs = 0)
V_GS Gate- source voltage
I_D(1) Drain current (continuous) at T_C = 25°C
I_D
I_DM ⁽²⁾
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
P_TOT Total dissipation at T_C = 25°C
Derating factor
dv/dt⁽³⁾ Peak diode recovery voltage slope
E_AS ⁽⁴⁾ Single pulse avalanche energy
T_stg Storage temperature
T_j
Max. operating junction temperature
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. I_SD ≤50A, di/dt ≤600A/µs, V_DD ≤V_(BR)DSS, T_j ≤T_JMAX.
4. Starting T_j= 25°C, I_D= 50A, V_DD=25V
Table 3. Thermal data
Symbol
Parameter
R_thj-case Thermal resistance junction-case Max
R_thj-a Thermal resistance junction-ambient Max
T_l
Maximum lead temperature for soldering
purpose
Electrical ratings
Value
TO-220
DPAK
100
±20
50
35
200
150
125
1
0.83
27
385
– 55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mj
°C
Value
TO-220
DPAK
1
1.2
62.5
300
Unit
°C/W
°C/W
°C
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