STD40N2LH5_09 Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 25V, 0.01 OHM, 40A, DPAK, IPAK STripFET V Power MOSFET

STD40N2LH5, STU40N2LH5
Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
I_SD
I_SDM
V_SD
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current (pulsed)⁽¹⁾
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD= 20 A, V_GS=0
I_SD= 40 A,
di/dt =100 A/µs,
V_DD= 20 V, Tj = 25 °C
(Figure 15)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
40 A
-
160 A
-
1.1 V
17.6
ns
- 9.2
nC
1
A
Doc ID 14919 Rev 3
5/15