STD40N2LH5_09 Datasheet, PDF (4/15 Pages) STMicroelectronics – N-channel 25V, 0.01 OHM, 40A, DPAK, IPAK STripFET V Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD40N2LH5, STU40N2LH5
(T_CASE = 25°C unless otherwise specified)
Table 4.
Symbol
Static
Parameter
V_(BR)DSS
Drain-source breakdown
voltage
I_DSS
I_GSS
V_GS(th)
Zero gate voltage drain
current (V_GS = 0)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
R_DS(on)
Static drain-source on
resistance
Test conditions
I_D = 250 µA, V_GS= 0
V_DS = 25 V
V_DS = 25 V, T_C = 125 °C
V_GS = ± 22 V
V_DS= V_GS, I_D = 250 µA
V_GS= 10 V, I_D= 20 A
SMD version
V_GS= 10 V, I_D= 20 A
V_GS= 5 V, I_D= 20 A
SMD version
V_GS= 5 V, I_D= 20 A
Min. Typ. Max. Unit
25
V
1 µA
10 µA
±100 nA
1
V
0.01 0.0118 Ω
0.0106 0.0124 Ω
0.0135 0.0155 Ω
0.0141 0.0161 Ω
Table 5.
Symbol
Dynamic
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V_DS = 20 V, f=1 MHz,
V_GS = 0
V_DD=15 V, I_D = 40 A
V_GS = 5 V
(Figure 14)
Min. Typ. Max. Unit
700
pF
-
160
- pF
27
pF
6.3
nC
-
2.4
- nC
2.7
nC
Table 6. Switching on/off (resistive load)
Symbol
Parameter
Test conditions
Min.
t_d(on)
t_r
Turn-on delay time
Rise time
t_d(off)
t_f
Turn-off delay time
Fall time
V_DD= 10 V, I_D= 20 A,
R_G= 4.7 Ω, V_GS= 10 V
-
(Figure 13 and Figure 18)
V_DD= 10 V, I_D= 20 A,
R_G= 4.7 Ω, V_GS= 10 V
-
(Figure 13 and Figure 18)
Typ.
4.8
13.6
17.6
3.5
Max. Unit
ns
-
ns
ns
-
ns
4/15
Doc ID 14919 Rev 3