STD3NK60ZD Datasheet, PDF (5/14 Pages) STMicroelectronics – N-channel 600 V, 3.3 Ω, 2.4 A, DPAK SuperFREDMesh™ Power MOSFET

STD3NK60ZD
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
V_DD = 480 V, I_D = 3 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 15)
Min. Typ. Max Unit
9
ns
14
ns
19
ns
14
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 10 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 2.4 A, di/dt = 100 A/µs
V_DD = 60 V
(see Figure 20)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 2.4 A, di/dt = 100 A/µs
V_DD = 60 V, T_j = 150 °C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
2.4 A
9.6 A
1.6 V
98
ns
170
nC
3.4
A
105
ns
184
nC
3.5
A
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