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| STD3NK60ZD Datasheet, PDF (4/14 Pages) STMicroelectronics – N-channel 600 V, 3.3 Ω, 2.4 A, DPAK SuperFREDMesh™ Power MOSFET | |||
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Electrical characteristics
2
Electrical characteristics
STD3NK60ZD
(Tcase =25 °C unless otherwise specified)
Table 5.
Symbol
On /off states
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source on
resistance
VGS = 10 V, ID = 1.2 A
Min. Typ. Max. Unit
600
V
1 µA
50 µA
± 10 µA
3 3.75 4.5 V
3.3 3.6 â¦
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
311
43
8
pF
pF
pF
Coss
(1)
eq
Equivalent output
capacitance
VGS = 0, VDS = 0 to 400 V
27
pF
Qg
Total gate charge
VDD = 400 V, ID = 2.4 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 16)
11.8
nC
2.6
nC
6.4
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/14
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