STD25NF10LT4 Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel 100V - 0.030Ohm - 25A - DPAK Low gate charge STripFET II Power MOSFET

STD25NF10L
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
Min.
I_SD
I_SDM ⁽¹⁾
Source-drain current
Source-drain current
(pulsed)
V_SD ⁽²⁾ Forward on voltage
I_SD = 25A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time I_SD = 25A, di/dt = 100A/µs,
Reverse recovery charge V_DD = 50V, T_j = 150°C
Reverse recovery current (see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Typ.
88
317
7.2
Max. Unit
25
A
100 A
1.5 V
ns
nC
A
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