STD25NF10LT4 Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 100V - 0.030Ohm - 25A - DPAK Low gate charge STripFET II Power MOSFET

Electrical characteristics
2
Electrical characteristics
STD25NF10L
(T_CASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V_{(BR)DSS breakdown voltage}
I_DSS
Zero gate voltage
drain current (V_GS = 0)
I_GSS
V_GS(th)
R_DS(on)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I_D = 250µA, V_GS =0
100
V
V_DS = Max rating
V_DS = Max rating,
T_C = 125°C
1
µA
10
µA
V_GS = ± 16V
±100 nA
V_DS = V_GS, I_D = 250µA
1
2.5
V
V_GS = 10V, I_D = 12.5A
V_GS = 4.5V, I_D = 12.5A
0.030 0.035 Ω
0.035 0.040 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾
Forward
transconductance
V_DS = 15V, I_D = 12.5A
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 25V, f = 1MHz,
V_GS = 0
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_DD = 50V, I_D = 12.5A
R_G = 4.7Ω V_GS = 5V
(see Figure 13)
Q_g
Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 80V, I_D = 25A,
V_GS = 5V, R_G = 4.7Ω
(see Figure 14)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min. Typ. Max. Unit
24
S
1710
pF
250
pF
110
pF
20
ns
40
ns
58
ns
20
ns
38
52
nC
8.5
nC
21
nC
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