STD25NF10LA Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 100 V, 0.030 Ω, 25 A DPAK STripFET™ II Power MOSFET

STD25NF10LA
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD ^{Source-drain current}
I_SDM ⁽¹⁾ _{Source-drain current (pulsed)}
25
A
-
100 A
V_SD ⁽²⁾ Forward on voltage
I_SD = 25 A, V_GS = 0
-
1.5 V
t_rr Reverse recovery time
I_SD = 25 A, di/dt = 100 A/µs,
88
ns
Q_rr Reverse recovery charge
V_DD = 50 V, T_j = 150 °C
- 317
nC
I_RRM Reverse recovery current
(see Figure 15)
7.2
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 022319 Rev 1
5/15