STD25NF10LA Datasheet, PDF (3/15 Pages) STMicroelectronics – N-channel 100 V, 0.030 Ω, 25 A DPAK STripFET™ II Power MOSFET

STD25NF10LA
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
Drain-source voltage
V_GS
Gate- source voltage
I_D(1)
Drain current (continuous) at T_C = 25 °C
I_D
I_DM(2)
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
P_tot
Total dissipation at T_C = 25 °C
Derating Factor
dv/dt⁽³⁾ Peak diode recovery avalanche energy
E_AS ⁽⁴⁾
Single pulse avalanche energy
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Current limited by package
2. Pulse width limited by safe operating area.
3. I_SD ≤25 A, di/dt ≤300 A/µs, V_DD =V_(BR)DSS, T_J ≤T_JMAX
4. Starting T_j = 25 °C, I_D = 12.5 A V_DD = 50 V
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb Thermal resistance junction-pcb max ⁽¹⁾
1. When Mounted on 1 inch2 FR-4 board, 2 oz. of Cu.
Electrical ratings
Value
100
± 16
25
21
100
100
0.67
20
450
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Value
1.5
50
Unit
°C/W
°C/W
Doc ID 022319 Rev 1
3/15