STD180N4F6 Datasheet, PDF (5/16 Pages) STMicroelectronics – Very low on-resistance

STD180N4F6
Symbol
VSD⁽¹⁾
trr
Qrr
IRRM
Parameter
Forward on voltage
Reverse recovery
time
Reverse recovery
charge
Reverse recovery
current
Table 7: Source-drain diode
Test conditions
VGS = 0 V, ISD = 80 A
Electrical characteristics
Min. Typ. Max. Unit
-
1.3 V
- 36
ns
ISD = 80 A, di/dt = 100 A/µs,
VDD = 32 V, Tj = 25 °C (see Figure
15: "Test circuit for inductive load
- 40
nC
switching and diode recovery times")
- 2.3
A
Notes:
(1) _{Pulse test: pulse duration = 300 µs, duty cycle 1.5%.}
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