STD180N4F6 Datasheet, PDF (1/16 Pages) STMicroelectronics – Very low on-resistance

STD180N4F6
N-channel 40 V, 2.5 mΩ typ., 80 A STripFET™ F6
Power MOSFET in a DPAK package
Datasheet - preliminary data
Figure 1: Internal schematic diagram
Features
Order code
STD180N4F6
VDS
40 V
RDS(on) max.
2.8 mΩ
ID
80 A
PTOT
130 W
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
Applications
 Switching applications
 Power tools
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Order code
STD180N4F6
Table 1: Device summary
Marking
Package
180N4F6
DPAK
Packing
Tape and reel
July 2016
DocID028602 Rev 2
This is preliminary information on a new product now in development
or undergoing evaluation. Details are subject to change without notice.
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