STD130N4F6AG Datasheet, PDF (5/16 Pages) STMicroelectronics – Very low gate charge

STD130N4F6AG
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM(1)
V_SD(2)
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 40 A, V_GS = 0
I_SD = 80 A,
di/dt = 100 A/µs,
V_DD = 32 V
(see Figure 17)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
-
80 A
-
320 A
-
1.3 V
-
41
ns
-
58
nC
- 2.8
A
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