STD130N4F6AG Datasheet, PDF (1/16 Pages) STMicroelectronics – Very low gate charge

STD130N4F6AG
Automotive-grade N-channel 40 V, 3.0 mΩ typ., 80 A
STripFET™ F6 Power MOSFET in a DPAK package
Datasheet - production data
Features
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Figure 1. Internal schematic diagram
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Order code
STD130N4F6AG
V_DS
40 V
R_DS(on) max.
3.6 mΩ
I_D
80 A
• Designed for automotive applications and
AEC-Q101 qualified
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
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Order code
STD130N4F6AG
Table 1. Device summary
Marking
Package
130N4F6
DPAK
Packaging
Tape and reel
February 2015
This is information on a product in full production.
DocID027413 Rev 2
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