STD12NF06-1 Datasheet, PDF (5/14 Pages) STMicroelectronics – N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET™ II Power MOSFET

STD12NF06 - STD12NF06-1
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM
V_SD(1)
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 12A, V_GS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 12A,
di/dt = 100A/µs,
V_DD = 30V, T_J = 150°C
Figure 15 on page 8
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
12 A
48 A
1.3 V
50
ns
65
µC
3.5
A
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