STD12NF06-1 Datasheet, PDF (3/14 Pages) STMicroelectronics – N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET™ II Power MOSFET

STD12NF06 - STD12NF06-1
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS Drain-source voltage (V_GS = 0)
V_DGR Drain-gate voltage (R_GS = 20KΩ)
V_GS Gate-source voltage
I_D Drain current (continuous) at T_C = 25°C
I_D Drain current (continuous) at T_C=100°C
I_DM ⁽¹⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25°C
Derating factor
dv/dt ⁽²⁾ Peak diode recovery voltage slope
E_AS ⁽³⁾ Single pulse avalanche energy
T_stg Storage temperature
T_J Max. operating junction temperature
1. Pulse width limited by safe operating area
2. I_SD ≤12A, di/dt ≤200A/µs, V_DS ≤V_(BR)DSS, T_J ≤T_JMAX
3. Starting T_J = 25 ^oC, I_D = 6A, V_DD = 30V
Table 2. Thermal data
Symbol
Parameter
R_thJC
R_thJA
T_l
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Electrical ratings
Value
60
60
± 20
12
8.5
48
30
0.2
15
140
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Value
5
100
275
Unit
°C/W
°C/W
°C
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