STD11N50M2 Datasheet, PDF (5/19 Pages) STMicroelectronics – Low gate input resistance

STD11N50M2, STF11N50M2
Electrical characteristics
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
(1)
I_SDM
(2)
V_SD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
V_GS = 0, I_SD = 8 A
-
8A
-
32 A
-
1.6 V
t_rr Reverse recovery time
- 258
ns
I_SD = 8 A, di/dt = 100 A/μs
Q_rr Reverse recovery charge
V_DD = 60 V (see Figure 18)
-
1.84
μC
I_RRM Reverse recovery current
- 14.3
A
t_rr Reverse recovery time
I_SD = 8 A, di/dt = 100 A/μs
- 370
ns
Q_rr Reverse recovery charge V_DD = 60 V, T_j = 150 °C
- 2.87
μC
I_RRM Reverse recovery current
(see Figure 18)
- 15.5
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
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