STD11N50M2 Datasheet, PDF (1/19 Pages) STMicroelectronics – Low gate input resistance

STD11N50M2,
STF11N50M2
N-channel 500 V, 0.45 Ω typ,8 A, MDmesh II Plus™ low Qg
Power MOSFETs in DPAK and TO-220FP packages
Datasheet - preliminary data
Features
TAB
3
1
DPAK
3
2
1
TO-220FP
Order codes V_DS @ T_Jmax R_DS(on) max I_D
STD11N50M2
STF11N50M2
550 V
0.53 Ω 8 A
• Extremely low gate charge
• Lower R_DS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Figure 1. Internal schematic diagram
, TAB
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q_g. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
AM15572v1
Order codes
STD11N50M2
STF11N50M2
Table 1. Device summary
Marking
Package
11N50M2
DPAK
TO-220FP
Packaging
Tape and reel
Tube
June 2014
DocID025909 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/19
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