STD10NM65N Datasheet, PDF (5/17 Pages) STMicroelectronics – N-channel 650 V - 0.43 Ω - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh™ Power MOSFET

STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD = 325 V, I_D = 4.5 A
R_G = 4.7 Ω V_GS = 10 V
(see Figure 18)
Min Typ Max Unit
12
ns
8
ns
50
ns
20
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
t_rr
Q_rr
I_RRM
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 9 A, V_GS = 0
I_SD = 9 A,
di/dt = 100 A/µs
V_DD = 100 V
(see Figure 20)
I_SD = 9 A,
di/dt = 100 A/µs
V_DD = 100 V, T_j = 150 °C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min Typ Max Unit
9A
36 A
1.3 V
330
ns
3
µC
19
A
430
ns
4
µC
19
A
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