STD10NM65N Datasheet, PDF (1/17 Pages) STMicroelectronics – N-channel 650 V - 0.43 Ω - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh™ Power MOSFET

STD10NM65N - STF10NM65N
STP10NM65N - STU10NM65N
N-channel 650 V - 0.43 Ω - 9 A - TO-220 - TO-220FP- IPAK - DPAK
second generation MDmesh™ Power MOSFET
Features
Type
V_DSS
R_DS(on)
(@Tjmax) max
I_D
STD10NM65N
STF10NM65N
STP10NM65N
STU10NM65N
710 V
710 V
710 V
710 V
< 0.48 Ω
< 0.48 Ω
< 0.48 Ω
< 0.48 Ω
9A
9 A⁽¹⁾
9A
9A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices implements the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-220
3
2
1
TO-220FP
3
2
1
IPAK
3
1
DPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STD10NM65N
STF10NM65N
STP10NM65N
STU10NM65N
Marking
10NM65N
10NM65N
10NM65N
10NM65N
Package
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape & reel
Tube
Tube
Tube
February 2008
Rev 2
1/17
www.st.com
17