STD10NM50N Datasheet, PDF (5/18 Pages) STMicroelectronics – N-channel 500 V, 0.53 Ω, 7 A DPAK, TO-220FP, TO-220 MDmesh™ II Power MOSFET

STD10NM50N, STF10NM50N, STP10NM50N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD = 250 V, I_D = 3.5 A
R_G = 4.7 Ω V_GS = 10 V
(see Figure 17)
Min. Typ. Max. Unit
7.8
ns
4.4
ns
-
-
7.8
ns
12
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 7 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 7 A, di/dt = 100 A/µs
V_DD = 60 V
(see Figure 22)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 7 A, di/dt = 100 A/µs
V_DD = 60 V, T_j = 150 °C
(see Figure 22)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min Typ. Max Unit
7A
-
28 A
-
1.3 V
177
ns
- 1.4
µC
16
A
216
ns
- 1.7
µC
15.4
A
Doc ID 16929 Rev 3
5/18