STD10NM50N Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 500 V, 0.53 Ω, 7 A DPAK, TO-220FP, TO-220 MDmesh™ II Power MOSFET

Electrical characteristics
STD10NM50N, STF10NM50N, STP10NM50N
2
Electrical characteristics
(T_CASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Drain-source
V_(BR)DSS breakdown voltage
(V_GS = 0)
Zero gate voltage
I_{DSS drain current (VGS = 0)}
I_GSS
Gate-body leakage
current (V_DS = 0)
V_GS(th) Gate threshold voltage
R_DS(on)
Static drain-source on
resistance
Test conditions
I_D = 1 mA
V_DS = 500 V
V_DS = 500 V, T_C = 125 °C
V_GS = ± 25 V
V_DS = V_GS, I_D = 250 µA
V_GS = 10 V, I_D = 3.5 A
Min. Typ. Max. Unit
500
V
1 µA
100 µA
0.1 µA
2
3
4V
0.53 0.63 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 50 V, f = 1 MHz,
V_GS = 0
450
pF
- 38 - pF
1.3
pF
C_oss
(1)
eq.
Equivalent output
catacitance
V_GS = 0, V_DS = 0 to 400 V
- 167 - pF
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
R_g Gate input resistance
V_DD = 400 V, I_D = 7 A,
V_GS = 10 V,
(see Figure 18)
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
17
nC
- 3.3 - nC
8.5
nC
- 4.7 - Ω
1. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V^DS
increases from 0 to 80% V_DS.
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Doc ID 16929 Rev 3