STD100NH03L_06 Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 30V - 0.005ohm - 60A - DPAK STripFET TM III Power MOSFET

STD100NH03L
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD = 15V, I_D = 30A,
R_G = 4.7Ω, V_GS = 10V
Figure 13 on page 8
Min. Typ. Max. Unit
16
ns
95
ns
48 47 ns
23
ns
Table 6. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM
V_SD(1)
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 30A, V_GS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 60A,
di/dt = 100A/µs,
V_DD = 15V, T_J = 150°C
Figure 15 on page 8
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
60 A
240 A
1.4 V
46
ns
64
µC
2.8
A
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