STD100NH03L_06 Datasheet, PDF (3/15 Pages) STMicroelectronics – N-channel 30V - 0.005ohm - 60A - DPAK STripFET TM III Power MOSFET

STD100NH03L
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS Drain-source voltage (V_GS = 0)
V_DGR Drain-gate voltage (R_GS = 20KΩ)
V_GS
I_D ⁽¹⁾
I_D ⁽¹⁾
I_DM ⁽²⁾
Gate-source voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at T_C=100°C
Drain current (pulsed)
P_TOT Total dissipation at T_C = 25°C
Derating factor
E_AS ⁽³⁾ Single pulse avalanche energy
T_stg Storage temperature
T_J Max. operating junction temperature
1. Value limited by wire bonding.
2. Pulse width limited by safe operating area
3. Starting T_J = 25 ^oC, I_D = 30A, V_DD = 15V
Table 2.
Symbol
Thermal data
Parameter
R_thJC Thermal resistance junction-case Max
R_thJA Thermal resistance junction-ambient Max
R_thJ-PCB Thermal resistance junction-PCB Max
T_l
Maximum lead temperature for soldering
purpose
Electrical ratings
Value
30
30
± 20
60
60
240
100
0.66
700
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
Value
1.5
100
43
275
Unit
°C/W
°C/W
°C/W
°C
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