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| STC08IE150HV_07 Datasheet, PDF (5/11 Pages) STMicroelectronics – Emitter switched bipolar transistor ESBT 1500V - 8A - 0.08Ω | |||
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STC08IE150HV
Electrical characteristics
Table 4. Electrical characteristics (continued)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
VCS(dyn)
Collector-source
dynamic voltage
(1 µs)
VCC =Vclamp =600 V
VGS =10 V
IB = 0.4 A
IC =2 A
RG =4.7 â¦
1.7
V
t(peak) =500 ns
IB(peak) =4 A
Maximum collector-
VCSW source voltage switched RG =4.7 ⦠hFE = 5 IC = 8 A 1500
V
without snubber
5/11
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