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STC08IE150HV_07 Datasheet, PDF (1/11 Pages) STMicroelectronics – Emitter switched bipolar transistor ESBT 1500V - 8A - 0.08Ω | |||
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STC08IE150HV
Emitter switched bipolar transistor
ESBT® 1500V - 8A - 0.08 â¦
Features
VCS(ON)
IC
RCS(ON)
0.65 V
8A
0.08 â¦
â High voltage / high current cascode
configuration
â Low equivalent on resistance
â Very fast-switch, up to 150 kHz
â Squared RBSOA, up to 1500 V
â Very low CISS driven by RG = 4.7 â¦
â Very low turn-off cross over time
Application
â Aux SMPS for three phase mains
â PFC
Description
The STC08IE150HV is manufactured in
monolithic ESBT technology, aimed to provide
best performance in high frequency / high voltage
applications. it is designed for use in gate driven
based topologies.
234
1
TO247-4L HV
Figure 1. Internal schematic diagrams
Table 1. Device summary
Part number
Marking
STC08IE150HV
C08IE150HV
Package
TO247-4L HV
Packaging
Tube
November 2007
Rev 3
1/11
www.st.com
11
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