STB9NK60ZD_06 Datasheet, PDF (5/16 Pages) STMicroelectronics – N-channel 600V - 0.85Ω - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh™ Power MOSFET

STB9NK60ZD - STF9NK60ZD - STP9NK60ZD
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
t_r(Voff)
t_f
t_c
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 300V, I_D = 3.5A
R_G = 4.7Ω, V_GS = 10V
(see Figure 15)
V_DD = 480V, I_D = 7A,
R_G = 4.7Ω, V_GS = 10V
(see Figure 15)
Min. Typ. Max Unit
11.4
ns
13.6
ns
23.1
ns
15
ns
11
ns
8
ns
20
ns
Table 7. Source drain diode
Symbol
Parameter
Test Conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward On Voltage
I_SD = 7A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 7A, di/dt = 100A/µs
V_DD = 30V, T_j = 25°C
(see Figure 20)
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 7A, di/dt = 100A/µs
V_DD = 30V, T_j = 150°C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
7A
28 A
1.6 V
130
ns
663
nC
8.3
A
113
ns
935
nC
10
A
Table 8.
Symbol
Gate-source zener diode
Parameter
Test conditions
Min Typ Max Unit
BV_GSO(1)
Gate-source breakdown
voltage
Igs=± 1mA (open drain)
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
5/16