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| STB9NK60ZD_06 Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 600V - 0.85Ω - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh™ Power MOSFET | |||
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Electrical characteristics
STB9NK60ZD - STF9NK60ZD - STP9NK60ZD
2
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC = 125°C
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
Gate threshold voltage VDS = VGS, ID = 100µA
Static drain-source on
resistance
VGS = 10V, ID = 3.5A
Min.
600
2.5
Typ.
3.5
0.85
Max. Unit
V
1 µA
50 µA
±10 µA
4.5 V
0.95 â¦
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Forward
transconductance
VDS = 15V, ID = 3.5A
5.3
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz, VGS = 0
1110
135
30
pF
pF
pF
COSS
(2)
eq
Equivalent output
capacitance
VGS = 0V, VDS = 0V to 480V
72
pF
Qg
Total gate charge
VDD = 480V, ID = 7A,
Qgs Gate-source charge VGS = 10V
Qgd Gate-drain charge
(see Figure 16)
41
53 nC
8.7
nC
21
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/16
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