STB85NF3LL_06 Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel 30V - 0.006ohm - 85A - D2PAK Low gate charge STripFET TM II Power MOSFET

STB85NF3LL
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM(1)
V_SD(2)
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 85A, V_GS = 0
I_SD = 85A,
di/dt = 100A/µs,
V_DD = 15V, T_J = 150°C
Figure 14 on page 8
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
85 A
340 A
1.3 V
65
ns
105
µC
3.4
A
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