STB85NF3LL_06 Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 30V - 0.006ohm - 85A - D2PAK Low gate charge STripFET TM II Power MOSFET

Electrical characteristics
2
Electrical characteristics
STB85NF3LL
(T_CASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 250µA, V_GS= 0
30
V
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = Max rating,
V_DS = Max rating @125°C
1 µA
10 µA
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ±16V
±100 nA
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250µA
1
V
R_DS(on)
Static drain-source on
resistance
V_GS= 10V, I_D= 40A
V_GS = 4.5V, I_D = 40A
0.006 0.008 Ω
0.0075 0.0095 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS > I_D(on) x R_DS(on)max,
I_D = 40 A
V_DS =25V, f = 1 MHz,
V_GS = 0
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD =24V, I_D = 60A
V_GS =4.5V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
30
S
2210
pF
635
pF
138
pF
30 40 nC
9
nC
12.5
nC
Table 5. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
t_d(off)
t_f
t_c
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Test conditions
V_DD= 15V, I_D= 30A,
R_G=4.7Ω, V_GS=4.5V
Figure 12 on page 8
Vclamp =24V, I_D =30A
R_G = 4.7Ω, V_GS = 4.5V
Figure 14 on page 8
Min. Typ. Max. Unit
22
ns
130
ns
36.5
ns
36.5
ns
32
ns
23
ns
40
ns
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