STB80PF55T4 Datasheet, PDF (5/16 Pages) STMicroelectronics – P-channel 55 V, 0.016 Ω, 80 A TO-220, D2PAK STripFETTM II Power MOSFET

STB80PF55, STP80PF55
Electrical characteristics
Note:
Table 7. Source drain diode
Symbol
Parameter
Test condictions
Min. Typ. Max. Unit
I_SD Source-drain current
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
V_SD ⁽²⁾ Forward on voltage
I_SD = 80 A, V_GS = 0
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 80 A, di/dt = 100 A/µs _-
V_DD = 25 V, T_j =150 °C
1. Pulse width limited by Tjmax .
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.
10 A
40 A
1.6 V
110
ns
495
µC
9
A
For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
Doc ID 8177 Rev 6
5/16