STB80PF55T4 Datasheet, PDF (3/16 Pages) STMicroelectronics – P-channel 55 V, 0.016 Ω, 80 A TO-220, D2PAK STripFETTM II Power MOSFET

STB80PF55, STP80PF55
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
Drain-source voltage (V_GS = 0)
V_GS
Gate-source voltage
I_D(1)
Drain current (continuous) at T_C = 25°C
I_D
I_DM ⁽²⁾
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
P_TOT
Total dissipation at T_C = 25°C
Derating factor
dv/dt ⁽³⁾ Peak diode recovery voltage slope
E_AS(4)
Single pulse avalanche energy
T_j
Operating junction temperature
T_stg
Storage temperature
1. Current limited by package.
2. Pulse width limited by safe operating area .
3. I_SD < 40A, di/dt < 300 A/µs, V_DD=80% V_(BR)DSS.
4. Starting Tj=25°C, I_D=80A, V_DD=40V.
Value
55
±16
80
57
320
300
2
7
1.4
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
J
°C
Note:
Table 3. Thermal data
Symbol
Parameter
R_thj-case
R_thj-a
T_l
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Value
0.5
62.5
300
Unit
°C/W
°C/W
°C
For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
Doc ID 8177 Rev 6
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