STB80NF55-06_06 Datasheet, PDF (5/17 Pages) STMicroelectronics – N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
I_SD Source-drain current
I_SDM(1) Source-drain current (pulsed)
V_SD(2) Forward on voltage
I_SD=80A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=80A,
di/dt = 100A/µs,
V_DD=35V, T_J = 150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
80 A
320 A
1.5 V
100
ns
0.32
µC
6.5
A
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