STB80NF55-06_06 Datasheet, PDF (3/17 Pages) STMicroelectronics – N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET

STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS Drain-source voltage (V_GS = 0)
V_GS
I_D ⁽¹⁾
Gate-source voltage
Drain current (continuous) at T_C = 25°C
I_D ⁽¹⁾ Drain current (continuous) at T_C=100°C
I_DM(3) Drain current (pulsed)
P_TOT Total dissipation at T_C = 25°C
Derating factor
dv/dt ⁽⁴⁾ Peak diode recovery voltage slope
E_AS ⁽⁵⁾ Single pulse avalanche energy
V_ISO Insulation withstand voltage (DC)
T_J Operating junction temperature
T_stg Storage temperature
1. Limited by Package
2. Limited only by maximum temperature allowed
3. Pulse width limited by safe operating area
4. ) I_SD ≤80A, di/dt ≤400A/µs, V_DD ≤V_(BR)DSS, T_j ≤T_JMAX
5. Starting T_J = 25 ^oC, I_D = 40A, V_DD = 45V
Value
Unit
TO-220 / D²/ I²PAK TO-220FP
55
± 20
80
80
320
300
2
7
1.3
--
60 ⁽²⁾
42 ⁽²⁾
240 ⁽²⁾
45
0.30
2500
V
V
A
A
A
W
W/°C
V/ns
J
V
-55 to 175
°C
Table 2. Thermal data
Symbol
Parameter
R_thJC
R_thJA
T_l
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Value
Unit
TO-220 / D²/ I²PAK TO-220FP
0.5
62.5
3.33 °C/W
°C/W
300
°C
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