STB80NF55-06T Datasheet, PDF (5/15 Pages) STMicroelectronics – Switching application

STB80NF55-06T
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
I_SD = 80 A, V_GS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 80 A,
di/dt = 100 A/µs,
V_DD = 35 V, T_j = 150 °C
(see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
80
A
-
320 A
-
1.5 V
100
ns
- 0.32
nC
6.5
A
Doc ID 022702 Rev 1
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