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STB80NF55-06T Datasheet, PDF (4/15 Pages) STMicroelectronics – Switching application
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Electrical characteristics
2
Electrical characteristics
STB80NF55-06T
(TCASE= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
V(BR)DSS
VBR0
VBR1
VBR2
IDSS
IGSS(1)
VGS(th)
VGS(th)(2)
Drain-source
breakdown voltage
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source
on-resistance
1. Tested @VGS= ±22 V at wafer level.
2. Guaranteed by process.
Test conditions
ID = 250 µA, VGS =0
VGS= 1.5 V, ID = 250 µA
VGS= 1.5 V, ID = 10 mA
VGS= 1.5 V, ID = 100 mA
VDS = 55 V
VDS = 55 V, TC = 125 °C
VGS = ± 20 V
VDS = VGS, ID = 250 µA
Tj=175 °C, VDS = VGS
ID = 1 mA
VGS = 10 V, ID = 40 A
Min.
55
40
40
40
2
1
Typ.
5.0
Max. Unit
V
V
V
V
10
µA
100 µA
±100 nA
4
V
V
6.5 mΩ
Table 5.
Symbol
Dynamic
Parameter
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
Min. Typ. Max. Unit
4400
pF
VDS = 25 V, f = 1 MHz,
-
1020
pF
VGS = 0
350
pF
VDD = 27 V, ID = 60 A
RG = 4.7 Ω VGS = 10 V
-
(see Figure 13)
VDD = 44 V, ID = 80 A,
VGS = 4.5 V, RG = 10 Ω
-
(see Figure 14)
27
ns
155
ns
125
ns
65
ns
142 193 nC
29
nC
60.5
nC
4/15
Doc ID 022702 Rev 1
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