STB76NF80 Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel 80 V, 0.0095 Ω, 80 A D2PAK STripFET™ II Power MOSFET

STB76NF80
Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD= 37.5 V, I_D= 45 A,
R_G=4.7 Ω, V_GS=10 V
Figure 14 on page 8
Min. Typ. Max. Unit
25
ns
100
ns
-
-
66
ns
30
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ. Max Unit
I_SD Source-drain current
-
I_SDM(1) Source-drain current (pulsed)
-
V_SD(2) Forward on voltage
I_SD = 80 A, V_GS = 0
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 80 A,
di/dt = 100 A/µs,
-
V_DD = 25 V, T_J = 150 °C
Figure 16 on page 8
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
80 A
320 A
1.5 V
132
ns
660
nC
10
A
Doc ID 17290 Rev 1
5/13