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STB76NF80 Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 80 V, 0.0095 Ω, 80 A D2PAK STripFET™ II Power MOSFET
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Electrical characteristics
2
Electrical characteristics
STB76NF80
(TCASE=25 °C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
80
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125 °C
1 µA
10 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 20 V
±100 nA
VGS(th) Gate threshold voltage
VDS= VGS , ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 40 A
0.0095 0.011 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 15 V, ID = 40 A
VDS =25 V, f = 1 MHz,
VGS = 0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 60 V, ID = 80 A
VGS =10 V
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
-
20
S
3700
pF
-
730
pF
240
pF
117 160 nC
-
27
nC
47
nC
4/13
Doc ID 17290 Rev 1
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