STB70NH03L Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 60V - 0.0075ohm - 70A - D2PAK STripFET TM III Power MOSFET for DC-DC conversion

STB70NH03L
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
I_SD
I_SDM ⁽¹⁾
Source-drain current
Source-drain current
(pulsed)
V_SD(2) Forward on voltage
I_SD = 30 A
V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 60 A di/dt = 100A/µs
V_DD = 20 V T_J = 150°C
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
60
A
240 A
1.3
V
32
ns
51
nC
3.2
A
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