STB70NH03L Datasheet, PDF (4/15 Pages) STMicroelectronics – N-channel 60V - 0.0075ohm - 70A - D2PAK STripFET TM III Power MOSFET for DC-DC conversion

Electrical characteristics
2
Electrical characteristics
STB70NH03L
(T_CASE = 25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test conditions
Min Typ Max Unit
Drain-source
V_{(BR)DSS breakdown voltage}
I_D = 250 µA, V_GS = 0
30
V
I_DSS
Zero gate voltage
Drain current (V_GS = 0)
V_DS = max rating
V_DS = max rating
T_C = 125°C
1
µA
10 µA
I_GSS
Gate-body leakage
Current (V_DS = 0)
V_GS = ± 20 V
±100 nA
V_GS(th) Gate threshold voltage V_DS = V_GS
I_D = 250 µA 1
V
R_DS(on)
Static drain-source on
resistance
V_GS = 10 V
V_GS = 5 V
I_D = 30 A
I_D = 30 A
0.0075 0.0095 Ω
0.0135 0.009 Ω
Table 4.
Symbol
Dynamic
Parameter
Test conditions
Min
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
R_G Gate Input Resistance
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Q_gls(2)
Turn-on delay time
Rise time
Turn-off delay Time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Third-quadrant gate
charge
V_DS = 10 V
I_D = 18 A
V_DS = 10V f = 1 MHz V_GS = 0
f = 1 MHz gate DC bias = 0
test signal level = 20 mV
open drain
V_DD = 15 V I_D = 30 A
R_G = 4.7 Ω V_GS = 5 V
V_DD= 15V I_D= 70A
V_GS= 5V
V_DS< 0 V V_GS= 10 V
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. Gate charge for synchronous operation . See Chapter 6: Appendix A
Typ
25
2200
380
49
1.5
21
95
19
15
15.7
8.3
3.4
15
Max
21
Unit
S
pF
pF
pF
Ω
ns
ns
nC
nC
nC
nC
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