STB70NF03L_06 Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 30V - 0.0075ohm - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET TM II Power MOSFET

STB70NF03L - STP70NF03L - STB70NF03L-1
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
t_d(on)
t_r
Turn-on delay time
Rise time
Q_g
Q_gs
Q_gd
t_d(off)
t_f
Total gate charge
Gate-source charge
Gate-drain charge
Turn-off delay time
Fall time
Test conditions
Min
V_DD = 15V
R_G = 4.7Ω
Figure 16.
I_D = 35A
V_GS = 5V
V_DD= 15V I_D= 70A
V_GS= 5V
V_DD = 15V
R_G = 4.7Ω,
Figure 16.
I_D = 35A
V_GS = 5V
Typ
22
165
22.5
9
12
21
25
Max
30
Unit
ns
ns
nC
nC
nC
ns
ns
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
I_SD
I_SDM(1)
Source-drain current
Source-drain current
(pulsed)
V_SD ⁽²⁾ Forward on voltage
I_SD = 70A
V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time I_SD = 70A di/dt = 100A/µs
Reverse recovery charge V_DD = 20V T_J = 150°C
Reverse recovery current Figure 15.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
70
A
280 A
1.3
V
42
ns
52
nC
2.5
A
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