STB70NF03L_06 Datasheet, PDF (4/15 Pages) STMicroelectronics – N-channel 30V - 0.0075ohm - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET TM II Power MOSFET

Electrical characteristics
STB70NF03L - STP70NF03L - STB70NF03L-1
2
Electrical characteristics
(T_CASE=25°C unless otherwise specified)
Table 3. ON/OFF states
Symbol
Parameter
Test conditions
Min Typ Max Unit
Drain-source
V_{(BR)DSS Breakdown voltage}
I_D = 250µA, V_GS = 0
30
V
Zero gate voltage
V_DS = Max rating
I_DSS ^{Drain current (V}_GS ^{= 0)} V_DS = Max rating
T_C = 125°C
1
µA
10
µA
I_GSS
Gate-body leakage
current (V_DS = 0)
V_GS = ± 18V
±100 nA
V_GS(th) Gate threshold voltage V_DS = V_GS
I_D = 250µA 1
V
R_DS(on)
Static drain-source on
resistance
V_GS = 10 V
V_GS = 5 V
I_D = 35A
I_D = 18A
0.0075 0.0095 W
0.0135 0.018 W
Table 4.
Symbol
Dynamic
Parameter
g_fs ^(*)
C_iss
C_oss
C_rss
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Test conditions
Min Typ Max Unit
V_DS = 15V
I_D = 35A
25
S
1440
pF
V_DS = 25V f = 1 MHz V_GS = 0
560
135
pF
pF
4/15