STB60NF10_06 Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 100V - 0.019Ω - 80A - TO-220 - D2PAK - I2PAK STripFET™ II Power MOSFET

STB60NF10 - STB60NF10 -1 - STP60NF10
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD= 50V, I_D= 40A,
R_G=4.7Ω, V_GS=10V
Figure 13 on page 8
Min. Typ. Max. Unit
17
ns
56
ns
82
ns
23
ns
Table 6. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM(1)
V_SD(2)
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 80A, V_GS = 0
I_SD = 80A,
di/dt = 100A/µs,
V_DD = 25V, T_J = 150°C
Figure 15 on page 8
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
80 A
320 A
1.3 V
92
ns
340
nC
7.4
A
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