STB60NF10_06 Datasheet, PDF (3/15 Pages) STMicroelectronics – N-channel 100V - 0.019Ω - 80A - TO-220 - D2PAK - I2PAK STripFET™ II Power MOSFET

STB60NF10 - STB60NF10 -1 - STP60NF10
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS Drain-source voltage (V_GS = 0)
V_GS Gate-source voltage
I_D(1) Drain current (continuous) at T_C = 25°C
I_D Drain current (continuous) at T_C=100°C
I_DM(2) Drain current (pulsed)
P_TOT Total dissipation at T_C = 25°C
Derating factor
dv/dt ⁽³⁾ Peak diode recovery voltage slope
E_AS ⁽⁴⁾ Single pulse avalanche energy
T_stg Storage temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. I_SD ≤80A, di/dt ≤300A/µs, V_DD ≤V_(BR)DSS, T_J ≤T_JMAX
4. Starting T_J = 25 ^oC, I_D = 40A, V_DD = 30V
Table 2. Thermal data
Symbol
Parameter
R_thJC
R_thJA
T_l
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Electrical ratings
Value
100
± 20
80
66
320
300
2
16
485
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
J
°C
Value
0.5
62.5
300
Unit
°C/W
°C/W
°C
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