STB270N4F3_08 Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 40 V - 2.1 mΩ - 160 A - TO-220 - D2PAK - I2PAK STripFET™ Power MOSFET

STB270N4F3 - STI270N4F3 - STP270N4F3
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
Turn-on delay time
Rise time
t_d(off)
t_f
Turn-off delay time
Fall time
Test conditions
V_DD=20 V, I_D= 80 A,
R_G=4.7 Ω, V_GS=10 V
(see Figure 16)
V_DD=20 V, I_D= 80 A,
R_G=4.7 Ω, V_GS=10 V
(see Figure 16)
Min. Typ. Max. Unit
22
ns
180
ns
110
ns
45
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions Min Typ. Max Unit
I_SD
I_SDM(1)
V_SD(2)
t_rr
Q_rr
I_RRM
Source-drain current
D²PAK
TO-220
I²PAK
Source-drain current
(pulsed)
D²PAK
TO-220
I²PAK
Forward on voltage
I_SD=80 A, V_GS=0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=160 A,
di/dt = 100 A/µs,
V_DD=32 V, Tj=150 °C
(see Figure 15)
160 A
120 A
640 A
480 A
1.5 V
70
ns
225
nC
3.2
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
5/15