STB270N4F3_08 Datasheet, PDF (4/15 Pages) STMicroelectronics – N-channel 40 V - 2.1 mΩ - 160 A - TO-220 - D2PAK - I2PAK STripFET™ Power MOSFET

Electrical characteristics
STB270N4F3 - STI270N4F3 - STP270N4F3
2
Electrical characteristics
(T_CASE=25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
V_(BR)DSS
Drain-source
breakdown voltage
I_D = 250 µA, V_GS= 0
V_DS = Max rating,
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = Max rating
@125 °C
I_GSS
Gate body leakage
current (V_DS = 0)
V_GS = ±20 V
V_GS(th) Gate threshold voltage V_DS= V_GS, I_D = 250 µA
R_DS(on)
Static drain-source on
resistance
V_GS= 10 V, I_D= 80 A
Min. Typ. Max. Unit
40
V
10 µA
100 µA
2
TO-220
I²PAK
D²PAK
±200 nA
4V
2.5 2.9 mΩ
2.1 2.5 mΩ
Table 5. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾
Forward
transconductance
V_DS =15 V, I_D = 80 A
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS =25 V, f=1 MHz, V_GS=0
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd gate-drain charge
V_DD=20 V, I_D = 160 A
V_GS =10 V
(see Figure 14)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
200
S
7400
pF
1800
pF
47
pF
110 150 nC
27
nC
25
nC
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