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STB270N4F3 Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 40V - 2.1m ohm - 160A - TO-220 - D2PAK - I2PAK STripFE TM Power MOSFET
STB270N4F3 - STI270N4F3 - STP270N4F3
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
Test conditions
VDD=20 V, ID= 80A,
RG=4.7Ω, VGS=10V
(see Figure 15)
VDD=20 V, ID= 80A,
RG=4.7Ω, VGS=10V
(see Figure 15)
Min. Typ. Max. Unit
22
ns
180
ns
110
ns
45
ns
Table 6. Source drain diode
Symbol
Parameter
Test conditions Min
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Source-drain current
D²PAK
TO-220
I²PAK
Source-drain current
(pulsed)
D²PAK
TO-220
I²PAK
Forward on voltage
ISD=80A, VGS=0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=160A,
di/dt = 100A/µs,
VDD=32V, Tj=150°C
(see Figure 14)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Typ.
70
225
3.2
Max Unit
160 A
120 A
640 A
480 A
1.5 V
ns
nC
A
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