STB270N4F3 Datasheet, PDF (4/15 Pages) STMicroelectronics – N-channel 40V - 2.1m ohm - 160A - TO-220 - D2PAK - I2PAK STripFE TM Power MOSFET

Electrical characteristics
STB270N4F3 - STI270N4F3 - STP270N4F3
2
Electrical characteristics
(T_CASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test conditions
V_(BR)DSS
Drain-source
breakdown voltage
I_D = 250µA, V_GS= 0
I_DSS
Zero gate voltage drain ^{VDS = Max rating,}
current (V_GS = 0)
V_DS = Max rating
@125°C
I_GSS
Gate body leakage
current (V_DS = 0)
V_GS = ±20V
V_GS(th) Gate threshold voltage V_DS= V_GS, I_D = 250µA
R_DS(on)
Static drain-source on
resistance
V_GS= 10V, I_D= 80A
Min. Typ. Max. Unit
40
V
10 µA
100 µA
2
TO-220
I²PAK
D²PAK
±200 nA
4V
2.5 2.9 mΩ
2.1 2.5 mΩ
Table 4. Dynamic
Symbol
Parameter
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Test conditions
V_DS =15V, I_D = 80A
V_DS =25V, f=1 MHz, V_GS=0
Q_{g Total gate charge}
Q_gs Gate-source charge
Q_gd gate-drain charge
V_DD=20V, I_D = 160A
V_GS =10V
(see Figure 13)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
200
S
740
0
pF
180
pF
0
pF
47
110 150 nC
27
nC
25
nC
4/15